ArF is a chemically amplified resist which is best exposed at 193nm wavelength using binary or phase shifted reticles. Dry ArF is the standard process of hmds, coat, bake, expose, PEB, develop. Wet or dry ArF can also be used for double patterning. Immersion ArF is the same as dry ArF except the Scanner lens is immersed in a fluid, typically water. This yields a effectively higher NA and so better resolution. Below are pictures of typical tools for immersion litho. The TEL Lithius married to the ASML Twinscan 1950.

ArF (Argon hexa Fluoride laser) used for exposure. ArF resist is chemically amplified to reduce the exposure energy required. ArF wet or dry is dependent on a Post Exposure Bake to diffuse the Acid generated from the Photo Acid Generator. We can help optimize the resist profile, determine OPC needs for a new process, correct CDU and defect issues and any other litho need. Please contact us for a quote to help you..

In 2006 Dr Tom Wallow and Young Kim formally of AMD and myself Dave White formally of TOK Photoresist performed experiments for multipatterning. Then publish a manuscript. We are the fathers of ArF multipatterning scheme used widely in advanced semiconductors in 2024. . AMD uses more than 16 multi-patterning multiplexed steps to make gates for their newest microprocessors.

Choose us at Photolithography.net for any of the following and more:

• Photoresist coating optimization
• Photoresist changing and process characterization
• Photoresist use reduction (RRC)
• HMDS use optimization
• Critical Dimension Uniformity (CDU) optimization.  CDU should typically be less than 1% of feature size 1 sigma.
• Developer use for CD control
• Scanner to track throughput matching
• Defect investigations